InGaAsP/InP YAPISININ YAPISAL, MORFOLOJİK VE ELEKTRİKSEL KARAKTERİZASYONLARI

Barış KINACI
1.569 320

Öz


Bu çalışmada, InGaAsP tabakası InP alttaş üzerine Moleküler Demet Epitaksi (MBE) tekniği kullanılarak büyütüldü. InGaAsP/InP yapısının yapısal ve morfolojik özellikleri yüksek çözünürlüklü x‒ray kırınımı (HR‒XRD) ve atomik kuvvet mikroskobu (AFM) ölçümleri ile incelendi. Ayrıca, InGaAsP/InP yapısının deneysel ileri ve ters beslem akım‒voltaj (I‒V) karakteristiği oda sıcaklığında incelendi. İdealite faktörü, bariyer yüksekliği ve seri direnç gibi temel elektriksel parametreler ileri beslem I‒V karakteristiğinden belirlendi.


Anahtar kelimeler


InGaAsP/InP yapısı, MBE tekniği, HR‒XRD, AFM, I‒V karakteristik

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Referanslar


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